Semiconductor device having supporting electrode composite structure of metal containing fibers
US3969754A · kind A · utility
33Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 21, 1974 |
| Grant date | Jul 13, 1976 |
| Priority date | — |
| Expiry date | Oct 21, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a semiconductor substrate and a supporting electrode disposed at least on one surface of the semiconductor substrate, in which the supporting electrode has such a composite structure that fibers having a coefficient of thermal expansion substantially equal to or lower than that of the semiconductor substrate are embedded in a matrix of a metal having electric and heat conductivities higher than those of the fibers. This supporting electrode has a satisfactorily high heat conductivity and the coefficient of thermal expansion thereof is freely adjustable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.