Process for forming a through connection between a pair of circuit patterns disposed on opposite surfaces of a substrate

US3969815A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Hans-Jurgen Hacke · Birkenfeld, DE
• Robert Graf · Babenhausen, DE

Key dates

• Filing date: Aug 19, 1974
• Grant date: Jul 20, 1976
• Expiry date: Aug 19, 1994

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49167
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

In a process of forming through connections between metal circuit patterns formed in layers on opposite surfaces of a substrate characterized by forming an aperture through the pair of layers and the substrate, increasing the diameter of the aperture in the substrate, compressing the portions of each metal layer, which portions are overhanging the increased aperture, towards each other and subsequently forming a connection between the compressed portions of the opposite metal layers. Preferably, the apertures are formed by a mechanical operation such as drilling or punching and the substrate aperture is enlarged or widened by a selective etching process without substantially increasing the size of the aperture through the overlying metal layers. The electrical connection may be formed by galvanically depositing metal on the compressed portions to electrically interconnect the two portions, by welding the two portions together, or by applying solder such as during soldering a lead of a component which was inserted into the aperture.