Depletion layer laser beam modulator and deflector
US3970364A · kind A · utility
18Cited by
7References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 20, 1974 |
| Grant date | Jul 20, 1976 |
| Priority date | — |
| Expiry date | Aug 20, 1994 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/025
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Method and apparatus for deflecting and modulating a beam of coherent radiation wherein an electric potential is applied across the electrodes of an MOS semiconductor device to vary the thickness and hence conductivity of the depletion layer therein. Incident radiation being propagated through the semiconductor, or alternatively through the depletion layer itself, is deflected and/or modulated as the thickness of the depletion layer is varied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.