High common mode rejection differential amplifier utilizing enhancement depletion field effect transistors
US3970950A · kind A · utility
5Cited by
15References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 1975 |
| Grant date | Jul 20, 1976 |
| Priority date | — |
| Expiry date | Mar 21, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/45179
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A dual channel high gain differential amplifier utilizing enhancement depletion MOS field effect transistors which exhibits high common mode rejection and fast switching characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.