Lateral photodetector of improved sensitivity

US3971057A · kind A · utility

Assignee

• United States of America as represented by the Secretary of the Air Force · US

Inventors

• William P. Connors · Reading, US
• Richard H. Glaenzer · Bridgeton, US
• George A. Saum · Chesterfield, US
• Robert Wagner · Mequon, US

Key dates

• Filing date: Aug 21, 1973
• Grant date: Jul 20, 1976
• Expiry date: Aug 21, 1993

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/98

Abstract

A lateral photodetector of improved sensitivity and method of making the e. The photodetector consists of semiconductive wafer, having a transparent layer of metal deposited on its front face to form a Schottky barrier. A negative bias is applied to the Schottky barrier to form a depletion region in the wafer. A low resistivity layer is formed on back of the wafer to which four signal electrodes are attached. Before forming the cell, the semiconductor wafer was exposed to nuclear radiation to increase the responsivity of the cell.