Complementary bipolar transistors having collector diffused isolation
US3971059A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 1974 |
| Grant date | Jul 20, 1976 |
| Priority date | — |
| Expiry date | Sep 23, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A collector diffused isolation transistor wherein the normal buried layer in the substrate of the device is utilized as a collector region, an isolation region of the same conductivity type as the buried layer being formed by ion implantation of suitable atoms in the buried layer region with a second similar ion implantation in the surface of the epitaxial layer of second conductivity type grown over the substrate and buried layer, the collector diffused isolation region being formed by the up diffusion of the lower ion implanted region into the grown layer and the down diffusion of the upper ion implanted region into the grown layer so that the up and down diffusions overlap. Complimentary devices such as PNP and NPN devices are made on the same substrate utilizing this novel technique.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.