Optical information storage material and method of making it
US3971874A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1974 |
| Grant date | Jul 27, 1976 |
| Priority date | — |
| Expiry date | Aug 26, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31786
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An optical information storage material having a transparent base and a film deposited on the base, the state of which can be changed between a low optical density state and a high optical density state by the application of electrical, optical or thermal energy. The film is a tellurium oxide having the composition TeO.sub.x1 in which 0<x1<2.0, or a mixture of such a tellurium oxide and vanadium oxide for making it easier to change the state of the film material, or tellurium oxide and lead oxide for increasing the sensitivity of the film. The material is made by vacuum evaporating and depositing the tellurium oxide or the mixture of tellurium oxide with the vanadium or lead oxide from TeO.sub.2 or a solid solution of TeO.sub.2 and lead or vanadium oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.