Chemical vapor deposition of dielectric films containing Al, N, and Si
US3974003A · kind A · utility
16Cited by
8References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1975 |
| Grant date | Aug 10, 1976 |
| Priority date | — |
| Expiry date | Aug 25, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for depositing a layer containing Al; N, and Si on a substrate which comprises providing a substrate to be coated, a carrier gas, and a gaseous mixture of nitrogen source compounds, aluminum source compounds and silicon source material and heating the substrate to a temperature in the range of about 500.degree. to about 1,300.degree. C to thereby cause formation on the substrate of a layer containing Al, N, and Si; and products obtained by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.