Flat-band voltage reference
US3975648A · kind A · utility
37Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1975 |
| Grant date | Aug 17, 1976 |
| Priority date | — |
| Expiry date | Jun 16, 1995 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG05F3/247
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A flat-band voltage reference includes two insulated-gate field-effect transistors, hereinafter IGFETs, which are substantially identical except for their flat-band voltage characteristics and which are biased to carry equal drain currents at equal drain voltages. The resulting difference in potential between the gate contacts of the IGFETs produces a voltage reference which is substantially independent of variances in operating points, supply potentials, and temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.