Planar transmission line comprising a material having negative differential conductivity
US3975690A · kind A · utility
11Cited by
3References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 2, 1975 |
| Grant date | Aug 17, 1976 |
| Priority date | — |
| Expiry date | Sep 2, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/10
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
A planar transmission line comprising a Gunn effect semiconductor having an epitaxial portion as the propagating medium amplifies and switches r.f. signals and is not transit time limited in the direction of propagation. The spacing between the transmission line conductors and the dopant concentration of the Gunn effect semiconductor are selected to prevent the formation of domains and thereby prevent Gunn oscillations from occurring at E fields above the Gunn threshold.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.