Monolithic light-emitting diode and modulator
US3975751A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1974 |
| Grant date | Aug 17, 1976 |
| Priority date | — |
| Expiry date | Sep 19, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/10
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
For a reversed bias double heterostructure diodes, particularly GaAs diodes, electroabsorption can be obtained with reverse bias and light emission can be obtained with forward bias. However bulk absorption is large at wavelengths close to the band edge, where light emission occurs. Thus light emission through a modulator at zero bias is low. By providing for the light emulsion to be at a larger wavelength than that corresponding to the band edge high modulation efficiencies can be obtained. This is achieved by suitably doping the emitter differently as compared with the modulator so that light emission occurs at wavelengths greater than that at the fundamental energy gap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.