Silver, gallium, and oxygen contact for indium phosphide
US3977015A · kind A · utility
3Cited by
4References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1975 |
| Grant date | Aug 24, 1976 |
| Priority date | — |
| Expiry date | Mar 31, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N80/107
Abstract
A semiconductor transferred electron device of the kind which includes indium phosphide as a major constituent is provided with a cathode consisting of oxidized silver gallium. The cathode preferably contains 4 times more silver than gallium by weight, and the oxygen content is preferably from 2 to 20 atomic per cent of the gallium content of the cathode. This improved device provides high electrical to microwave conversion efficiencies for a high proportion of devices produced together in any given batch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.