Method for cathodic sputtering including suppressing temperature rise
US3977955A · kind A · utility
13Cited by
7References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 9, 1975 |
| Grant date | Aug 31, 1976 |
| Priority date | — |
| Expiry date | May 9, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a vacuum system for subjecting a workpiece such as a semiconductor wafer to a beam of energy, for example as in cathodic sputtering, temperature rise of the workpiece is inhibited by mounting the workpiece in minimal thermal contact with the support structure, and orienting it so that the back surface of the workpiece, that is, the face opposite to that upon which the energy beam impinges, is directed to a black body or low temperature portion of the vacuum chamber. In combination with this technique, the back surface is suitably treated to increase its emissivity such as, for example, by applying thereto a black coating.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.