III-V photocathode with nitrogen doping for increased quantum efficiency
US3978360A · kind A · utility
2Cited by
5References
3Claims
0Family size
Inventors
Key dates
| Filing date | Dec 27, 1974 |
| Grant date | Aug 31, 1976 |
| Priority date | — |
| Expiry date | Dec 27, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An increase in the quantum efficiency of a III-V photocathode is achieved by doping its semiconductor material with an acceptor and nitrogen, a column-V isoelectronic element, that introduces a spatially localized energy level just below the conduction band similar to a donor level to which optical transitions can occur. This increases the absorption coefficient, .alpha., without compensation of the acceptor dopant. A layer of a suitable I-V, I-VI or I-VII compound is included as an activation layer on the electron emission side to lower the work function of the photocathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.