Integrated structure vacuum tube
US3978364A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 24, 1974 |
| Grant date | Aug 31, 1976 |
| Priority date | — |
| Expiry date | Jul 24, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
High efficiency, multi-dimensional thin film vacuum tubes suitable for use in high temperature, high radiation environments are described. The tubes are fabricated by placing, as by photolithographic techniques, such as are used in solid state integrated circuits, thin film electrode members in selected arrays on facing interior wall surfaces of an alumina substrate envelope. Cathode members are formed using thin films of triple carbonate. The photoresist used in photolithography aids in activation of the cathodes by carbonizing and reacting with the reduced carbonates when heated in vacuum during forming. The finely powdered triple carbonate is mixed with the photoresist used to delineate the cathode locations in the conventional solid state photolithographic manner. Upon high temperature forming (1000.degree. C) the barium, etc. is formed at the surface. Anode and grid members are formed using thin films of refractory metal. Electron flow in the tubes is between grid elements from cathode to anode as in a conventional three-dimensional tube. Both circular geometry for average requirements as well as a repeated linear structure for increased current and power handling capability a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.