Buried-heterostructure diode injection laser
US3978428A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 23, 1975 |
| Grant date | Aug 31, 1976 |
| Priority date | — |
| Expiry date | Jun 23, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/145
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A buried-heterostructure (BH) diode injection laser capable of operating at low room temperature thresholds and in the lowest order TE, TM or TEM modes. The laser has an elongated groove in a substrate with the groove extending through a pump current confining layer with a central portion of the active layer substantially completely within the groove and substantially completely surrounded by light guiding and carrier confining layers of material having a lower index of refraction than the index of refraction of the material of the active layer. The light guiding and carrier confining layer in contact with the substrate has a central depression within the elongated groove and the central portion of the active layer is bowl-shaped and within the depression such that light waves produced by carrier recombination within the central portion of the active layer when the laser is forward biased are guided in the central portion of the active layer such that the laser produces a light beam having reduced width v. height dimensional variations such that the light beam can be used with symmetrical optical elements such as round lenses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.