Pressure sensitive field effect device
US3978508A · kind A · utility
11Cited by
5References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 14, 1975 |
| Grant date | Aug 31, 1976 |
| Priority date | — |
| Expiry date | Mar 14, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pressure sensitive field effect semiconductor device, which may be employed as a contactless switch is disclosed. The device employs at least one layer of an elastomer material which is also an electret to effectuate the conversion of a longitudinal pressure variation to an electrical variation and to create an electric field which regulates the conductivity of the current carrying channel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.