Method of etching films of silicon nitride and silicon dioxide
US3979241A · kind A · utility
40Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 29, 1973 |
| Grant date | Sep 7, 1976 |
| Priority date | — |
| Expiry date | Mar 29, 1993 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An etching liquid comprises ammonium fluoride or alkali fluoride dissolved in a polyvalent or higher alcohol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.