Process of producing semiconductor device
US3980508A · kind A · utility
8Cited by
9References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 1974 |
| Grant date | Sep 14, 1976 |
| Priority date | — |
| Expiry date | Oct 1, 1994 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An SiO.sub.2 film doped with an impurity is formed on at least one portion of a surface of a semiconductor wafer. The wafer is selectively etched after a protective film for selective etching is disposed into a predetermined pattern on the SiO.sub.2 film. The impurity included in the SiO.sub.2 film can be diffused into the wafer to form a PN junction in the latter. Then the wafer is selectively etched until that surface of the wafer to which the PN junction is exposed is bevelled.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.