Semiconductor components
US3984858A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1973 |
| Grant date | Oct 5, 1976 |
| Priority date | — |
| Expiry date | May 22, 1993 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor component having at least three p-n-junctions which may be switched from a blocking state to a conducting state. The base zone, positioned between the second and third p-n-junctions, is characterized in that it comprises three single zones, the center zone of which is more highly doped and appreciably thinner than either of the two outer zones. The doping concentrations in the two outer zones are equal to one another and appreciably lower than that in a control zone, which is positioned between the first and second p-n-junctions. The effect of the foregoing construction is to reduce the recovery time of the semiconductor component without causing an increase in the forward potential drop, or vice-versa.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.