Memory circuit
US3986173A · kind A · utility
12Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 1975 |
| Grant date | Oct 12, 1976 |
| Priority date | — |
| Expiry date | Oct 8, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/406
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor storage circuit for use in monolithic memories. The circuit is comprised of a storage cell coupled to input-output bit lines through active devices having symmetrical conduction properties. The storage cell can be comprised of a pair of cross coupled bipolar transistors having resistors as collector load devices. Schottky field effect transistors (MESFET's) are active devices having symmetrical conduction properties. The entire circuit of the invention is readily created in integrated form in semiconductor wafers using existing processes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.