High efficiency gallium arsenide impatt diodes
US3986192A · kind A · utility
6Cited by
8References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 2, 1975 |
| Grant date | Oct 12, 1976 |
| Priority date | — |
| Expiry date | Jan 2, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/936
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped depletion region contacted by a rectifying barrier can be more precisely fixed by forming a "clump" of charge at exactly the depth below the surface contacted by the rectifying barrier corresponding to the desired depletion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.