Method of manufacturing semiconductor camera tube targets
US3986761A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 5, 1965 |
| Grant date | Oct 19, 1976 |
| Priority date | — |
| Expiry date | Aug 5, 1985 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/233
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
1. The method of manufacturing a camera tube target from a semiconductor material for placement in a camera tube prior to degassing thereof comprising the steps of initially doping the semiconductor material with an impurity for rendering it sensitive to a desired radiation spectrum but in a quantity less than required for sensitivity in said desired radiation spectrum; annealing said semiconductor material at a temperature greater than the subsequent degassing temperature for a period of time effective to increase the impurity concentration to a level sufficient to render the semicoductor material sensitive to the desired radiation spectrum, said concentration being substantially more stable at lower degassing temperatures than the initial impurity concentration; positioning said semiconductor material as a target within a radiation sensitive camera tube enclosure; and degassing said camera tube enclosure by heating said enclosure including said target for driving the gas from said enclosure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.