Thermally balanced PN junction
US3988759A · kind A · utility
2Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1974 |
| Grant date | Oct 26, 1976 |
| Priority date | — |
| Expiry date | Aug 26, 1994 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Regions of high resistivity, with respect to the surrounding material, are designed into a semiconductor device at points where hot-spots have been observed. A device made in this manner has very good second breakdown characteristics. One application is in large area junction transistors having an interdigitated base-emitter configuration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.