Semiconductor luminescent device
US3990096A · kind A · utility
19Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1975 |
| Grant date | Nov 2, 1976 |
| Priority date | — |
| Expiry date | Aug 25, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The disclosed semiconductor luminescent device comprises a semiconductive body including a first semiconductor layer formed of a first semiconductive material and sandwiched between a second and a third semiconductor layer formed of a second semiconductive material having a resistivity higher than that of the first material by two orders of magnitude or more. Each of the first, second and third layers includes an n and a p type region. A first and a second electrode are connected to the p and n type regions of the first layer with low resistances respectively. Light is efficiently emitted from the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.