Method of manufacturing a magnetizable layer for a magnetic domain device
US3991233A · kind A · utility
2Cited by
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1Claims
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Key dates
| Filing date | Apr 24, 1975 |
| Grant date | Nov 9, 1976 |
| Priority date | — |
| Expiry date | Apr 24, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/24
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a magnetizable layer having domains with at most two Bloch walls for a magnetic domain device in which a monocrystalline layer of Y.sub.3.sub.-x La.sub.x Fe.sub.5.sub.-Y Ga.sub.Y O.sub.12, wherein 0.1 .ltoreq. .times. .ltoreq. 0.2 and 1.0 .ltoreq. Y .ltoreq. 1.5 is provided on a monocrystalline substrate and is covered with an SiO-containing layer after which the monocrystalline layer is maintained at a temperature between 300.degree. C and 600.degree. C for some time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.