Photovoltaic cell employing lattice matched quaternary passivating layer
US3993506A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 25, 1975 |
| Grant date | Nov 23, 1976 |
| Priority date | — |
| Expiry date | Sep 25, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
A photovoltaic cell has an active portion comprising at least one active layer of a IIIA-VA compound having a p-n junction adjacent an upper surface thereof and an overlying epitaxially grown passivating layer of the quaternary alloy AlGaAsP. The passivating layer has a substantially higher bandgap than the active layer so that it is transparent to photons to which the active layer is sensitive. The lattice constant of this passivating layer can be made the same as that of the active layer, thereby to improve efficiency and device performance by reducing surface recombinations of generated carriers, such that a greater percentage of generated carriers will reach the p-n junction and provide useful output electrical energy. The active portion comprises a GaAs layer covered by an AlGaAsP passivating layer, and the AlGaAsP passivating layer can be lattice matched to the GaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.