Mounting technique for thin film Schottky barrier photodiodes
US3993800A · kind A · utility
4Cited by
2References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 1, 1975 |
| Grant date | Nov 23, 1976 |
| Priority date | — |
| Expiry date | Apr 1, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/60
- WIPO fieldOther consumer goods
- WIPO sectorOther fields
Abstract
A method of mounting thin film photodiodes to a cryogenic cold finger in ch the photodiode uses opaque metal Schottky barrier contacts to form the active regions of the photodiode. The method comprises laying a mirrored surface on one side of a radiation transparent substrate with the thin film photodiode on the other side of the substrate and the plurality of metal Schottky barrier contacts on the photodiode. The mirrored side of the substrate is mounted to the cold finger and reflects incoming radiation off the mirrored surface back to the active area of the photodiode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.