Normally off Schottky barrier field effect transistor and method of fabrication
US3996656A · kind A · utility
12Cited by
4References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 24, 1975 |
| Grant date | Dec 14, 1976 |
| Priority date | — |
| Expiry date | Dec 24, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
Abstract
A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.