Process for producing semiconductor memory device
US3996658A · kind A · utility
17Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1976 |
| Grant date | Dec 14, 1976 |
| Priority date | — |
| Expiry date | Mar 30, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A distance between two electrodes of a CCD device is reduced to an extremely small value, thereby increasing the memory density, of the CCD device. In the process of the present invention, upon formation of a first electrode, an insulating layer is formed on the entire top surface of the semiconductor wafer. The material of another electrode is then placed on the entire top surface of the wafer. These layers are then selectively removed to form a CCD structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.