Glass-ceramic dopant host for vapor phase transport of B.sub.2 O.sub.3
US3997351A · kind A · utility
8Cited by
4References
3Claims
0Family size
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Key dates
| Filing date | Jun 18, 1975 |
| Grant date | Dec 14, 1976 |
| Priority date | — |
| Expiry date | Jun 18, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed is a method for diffusion doping of silicon and germanium semiconductors by the vapor phase transport of B.sub.2 O.sub.3 from a solid B.sub.2 O.sub.3 source to the silicon semiconductor, wherein the solid B.sub.2 O.sub.3 source comprises a rigid, dimensionally stable, glass-ceramic body containing at least about 10 mole percent of B.sub.2 O.sub.3 in the glassy phase, the crystalline phase, or both.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.