Barium aluminoborosilicate glass-ceramics for semiconductor doping
US3998667A · kind A · utility
6Cited by
4References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 19, 1975 |
| Grant date | Dec 21, 1976 |
| Priority date | — |
| Expiry date | Dec 19, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S252/951
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Disclosed are B.sub.2 O.sub.3 -containing glass-ceramic bodies made by in situ thermal crystallization of glasses and useful as a host for diffusion doping of semiconductors by the vapor phase transport of B.sub.2 O.sub.3 to the semiconductor from the glass-ceramic which in mole percent consists essentially of over 40 and up to 60 SiO.sub.2, 10 to 30 Al.sub.2 O.sub.3, 20 to 40 B.sub.2 O.sub.3 and 3 to 20 alkaline earth oxides including 1 to 15 BaO wherein the ratio of Al.sub.2 O.sub.3 to alkaline earth oxides is from 1.5 to 4.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.