Deep channel MOS transistor

US4000504A · kind A · utility

Assignee

• Hewlett-Packard Company, L.P. · US

Inventor

• Josef Berger · Tegernsee, DE

Key dates

• Filing date: May 12, 1975
• Grant date: Dec 28, 1976
• Expiry date: May 12, 1995

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/60

Abstract

A semiconductor charge storage and detection device is provided in which an ion implanted conductive channel is buried between source and drain regions in the bulk of a semiconductor substrate. A charge storage region extends between the channel and the surface of the semiconductor device. The charge storage region is isolated from the semiconductor substrate and may be depleted of charge or enabled to store charge depending upon the electrical potential applied to a gate electrode at the surface of the device. The amount of charge stored may be detected by sensing the conductance of the buried channel. The device may be variously configured, e.g. as a non-destructive readable photosensor or as a memory cell.