Semiconductor device having two annular electrodes
US4000507A · kind A · utility
4Cited by
2References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1975 |
| Grant date | Dec 28, 1976 |
| Priority date | — |
| Expiry date | Jan 20, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/585
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device wherein an insulating film is provided on that surface of a semiconductor substrate to which a base-collector junction extends, two annular electrodes are formed with the junction formed therebetween. One of the electrodes is maintained at base potential, while the other electrode is maintained at collector potential. Thus, moisture or like contaminants adhering to the insulating film are prevented from leading to the generation of excessive channel current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.