Epitaxial growth device
US4000716A · kind A · utility
9Cited by
8References
17Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 12, 1971 |
| Grant date | Jan 4, 1977 |
| Priority date | — |
| Expiry date | Aug 12, 1991 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A longitudinal epitaxial growth device for making a mixed crystal of III.sub.b -V.sub.b group intermetallic compound semiconductor in which a means for inverting the reaction gas flow is disposed between the gallium source and the substrate, the height of the device is reduced, and the length of the gas mixing band is made sufficiently long.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.