Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness
US4001014A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 1974 |
| Grant date | Jan 4, 1977 |
| Priority date | — |
| Expiry date | Sep 12, 1994 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/0436
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electrophotographic photosensitive plate having, in order from the bottom up, an electrically conductive substrate, a photosensitizing layer composed of vitreous selenium and tellurium having a thickness of 0.1 to 3 microns, and a top organic layer including polyvinyl carbazole or a derivative thereof, the photosensitizing layer being composed of a first layer of 0.05 to 2 microns in thickness having 60 to 90 weight % of selenium and 40 to 10 weight % of tellurium and a second layer of 0.05 to 1 micron in thickness having a higher concentration of selenium than that of the first layer, and the second layer being positioned between the first layer and the top organic layer. This invention also provides a process of producing a latent electrostatic image on the plate by providing a negative electrostatic charge thereon and exposing the plate to a light image of visible light having a wavelength in the range of 4000 to 8000A. Advantages of this electrophotographic plate are that it has high sensitivity to the visible light along with low residual potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.