Thin film resistor
US4001762A · kind A · utility
32Cited by
7References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1975 |
| Grant date | Jan 4, 1977 |
| Priority date | — |
| Expiry date | Jun 2, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/934
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.