MOS-capacitor for integrated circuits
US4001869A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 9, 1975 |
| Grant date | Jan 4, 1977 |
| Priority date | — |
| Expiry date | Jun 9, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/66
Abstract
In an integrated circuit formed in a P-type silicon crystal body having an N-type epitaxial layer grown thereon, and having at least one bipolar transistor and at least one ion implanted resistor formed therein, a MOS type capacitor is formed requiring no additional processing steps beyond those normally required to form the resistor and the transistor. The capacitor comprises a first electrode of P-type material, a thin layer of silicon oxide grown simultaneously with the oxide through which the resistor is implanted, and a metal electrode over the oxide dielectric layer. The capacitor of this invention exhibits a relatively high capacitance per unit area of integrated circuit real estate and may be manufactured using only process steps that are required to form bipolar transistors and ion implanted resistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.