Method for improving the doping of a semiconductor material
US4004950A · kind A · utility
15Cited by
5References
21Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jan 10, 1975 |
| Grant date | Jan 25, 1977 |
| Priority date | — |
| Expiry date | Jan 10, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a first step, the semiconductor material is doped in a known manner with impurities having a given conductivity type and a given concentration profile. In a second step, the material is maintained at a high temperature, bombarded with a beam of particles which are accelerated with a given energy so as to penetrate into the crystal during a predetermined time interval. The resultant migration of impurities produces an increase in the impurity concentration irrespective of the sign of the initial concentration gradient within a zone adjacent to the zone of stopping of the particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.