Low beam velocity retina for Schottky infrared vidicons
US4005327A · kind A · utility
2Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1975 |
| Grant date | Jan 25, 1977 |
| Priority date | — |
| Expiry date | Oct 28, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J29/455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.