Heat treating method for metal film resistor
US4007063A · kind A · utility
Inventors
Key dates
| Filing date | Jun 12, 1975 |
| Grant date | Feb 8, 1977 |
| Priority date | — |
| Expiry date | Jun 12, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/265
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of heat-treating a metal film for use as a resistor and the resulting product. The method involves heating the film in an oxidizing atmosphere for forming a protective oxide film on the metal film, removing adsorbed foreign elements therefrom, and changing the crystal structure thereof, and for a time sufficient to change the initial temperature coefficient of resistance to a desired value. The temperature for the heating when the coefficient is to be changed in the positive direction is a temperature in the range between the first and second critical temperature for heat treating in and above the third critical temperature. When the coefficient is to be changed in the negative direction, the temperature is between the second and the third critical temperatures for heat treating in air.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.