Method of making an epitaxial growth layer of GaAs.sub.1-x P.sub.x compound semiconductor
US4007074A · kind A · utility
11Cited by
8References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1971 |
| Grant date | Feb 8, 1977 |
| Priority date | — |
| Expiry date | Jan 8, 1991 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
Abstract
A layer of GaAs.sub.1-x P.sub.x (0<x<1) is epitaxially grown on GaAs which is disposed in a reaction tube at a different location from the Ga source by maintaining the GaAs at a temperature range of from about 750.degree. C. to about 850.degree. C., maintaining the Ga source at a temperature higher than that of the GaAs, introducing As.sub.4 gas, PCl.sub.3 gas and H.sub.2 gas or AsCl.sub.3 gas, P.sub.4 gas and H.sub.2 gas into the reaction tube from the Ga source side, whereby said gases react with the Ga source and produce GaCl gas, and contacting said gases including the GaCl gas with the surface of the GaAs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.