Thin-film field-emission electron source and a method for manufacturing the same
US4008412A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1975 |
| Grant date | Feb 15, 1977 |
| Priority date | — |
| Expiry date | Aug 18, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J9/025
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film field-emission electron source having an emitter within a minute cavity in a conductive substrate, an insulating layer covering the surface of the substrate except for the portion of the cavity, and a first anode layer on the insulating layer, wherein the substrate and the emitter are comprised as one body, and the insulating layer and the first anode layer overhang the cavity, except directly over the emitter. This electron source may be manufactured by the method comprising the steps of i) forming a sandwich structure of the substrate-insulating layer-first anode layer, ii) forming a closed loop opening at a predetermined position on the surface of the first anode layer, iii) etching the insulating layer with the use of the first anode layer as a mask and iv) forming an emitter and a cavity by etching the substrate with the use of the insulating layer as a mask. This thin-film field-emission electron source can be manufactured very readily and has good insulation between the emitter and the first anode layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.