Dual diode microwave amplifier
US4009446A · kind A · utility
4Cited by
17References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 1976 |
| Grant date | Feb 22, 1977 |
| Priority date | — |
| Expiry date | Mar 19, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/10
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Microwave reflection amplifier having improved gain, bandwidth and noise characteristics, uses two negative-resistance diodes, such as Gunn-effect diodes, connected in series across the terminals. The diodes are series resonated by inductance in their leads. The gain and bandwidth are higher than in amplifiers using a single diode. A shunt-resonant circuit is connected across one diode to improve the gain-bandwidth. A second shunt-resonant circuit may be connected across the terminals. At very high frequencies, the amplifier uses strip-line or microstrip circuitry and the shunt resonators are half-wavelength transmission lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.