Nonvolatile semiconductor memory devices
US4011576A · kind A · utility
14Cited by
2References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 25, 1975 |
| Grant date | Mar 8, 1977 |
| Priority date | — |
| Expiry date | Aug 25, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/69
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile semiconductor memory device of the type known as an insulated gate field effect transistor, in which a thick gate insulating layer overlaps the source and drain regions formed in a substrate. The surface of the substrate underlying the thick gate insulating layer is doped lightly with impurities having opposite conductivity relative to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.