Semiconductor field effect device having oxygen enriched polycrystalline silicon
US4012762A · kind A · utility
16Cited by
6References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1975 |
| Grant date | Mar 15, 1977 |
| Priority date | — |
| Expiry date | Jun 16, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.