Method for non-destructive removal of semiconductor devices
US4012832A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 12, 1976 |
| Grant date | Mar 22, 1977 |
| Priority date | — |
| Expiry date | Mar 12, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having a conductive lead pattern on the bottom of the device are bonded to conductive pads on a substrate to form an electrical connection therewith. The connection comprises two layers of conductive adhesive plastic separated by a small chip of conductive alloy which melts above the curing temperature of the adhesive plastic. The non-destructive removal of a semiconductor device from the substrate is accomplished by heating only the semiconductor device to be removed until the alloy chip under the device melts, thus, permitting the non-destructive removal of the semiconductor device without the application of force which would tend to destroy the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.