Process for eliminating undesirable charge centers in MIS devices
US4013485A · kind A · utility
19Cited by
1References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1976 |
| Grant date | Mar 22, 1977 |
| Priority date | — |
| Expiry date | Apr 29, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/91
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The electrical properties of MIS semiconductor devices, which have been damaged by radiation, are restored by treating the devices in a properly oriented RF field at low pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.