Semiconductor device
US4014037A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 24, 1975 |
| Grant date | Mar 22, 1977 |
| Priority date | — |
| Expiry date | Mar 24, 1995 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/905
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polycrystalline silicon layer as a passivation layer formed on a semiconductor single crystal layer in a semiconductor device and in which polycrystalline silicon layer contains 2 to 45 atomic percent of oxygen. This layer can be formed under accurate control by utilizing a mixed gas of nitrogen oxide as an oxygen supply source and a silicon compound as a silicon supply source is thermally decomposed. The polycrystalline silicon is constituted of grains comprising single crystals of silicon. Oxygen atoms are uniformly distributed in the grains. Substantially no SiO.sub.2 layer exists between the grains and the semiconductor single crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.