Method for fabricating a silicon device utilizing ion-implantation and selective oxidation
US4016007A · kind A · utility
24Cited by
8References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 13, 1976 |
| Grant date | Apr 5, 1977 |
| Priority date | — |
| Expiry date | Feb 13, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/117
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A polycrystalline silicon layer is deposited by chemical vapor deposition method at a predetermined location on an oxide film grown by thermal oxidation on a surface of a monocrystal silicon substrate. Nitrogen ions are implanted in the outer surface of the polycrystalline silicon layer and the exposed surface of the oxide film. The whole surfaces are oxidized by wet oxidation so as to form a thick oxide layer at the surface of the oxide film which is not covered by the polycrystalline silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.